StratEdge features packages for the extreme demands of GaN and GaAs devices at IMS2018 in booth 1649
StratEdge Corporation, leader in the design, production, and assembly of high-performance semiconductor packages for microwave, millimeter-wave, and high-speed digital devices, will feature its new line of packages that meet the extreme demands of gallium nitride (GaN) and gallium arsenide (GaAs) devices at the 2018 International Microwave Symposium. StratEdge packages meet the critical requirements of the telecom, mixed signal, VSAT, broadband wireless, satellite, military, test and measurement, automotive, down-hole, and MEMS markets.
StratEdge will showcase its complete line of post-fired and molded ceramic semiconductor packages operating from DC to 63+ GHz. These packages have electrical transition designs that ensure exceptionally low electrical losses and operate efficiently, even at the highest frequencies. All packages are lead-free and most meet RoHS and WEEE standards. In addition, StratEdge offers complete automated assembly and test services for these packages, including gold-tin solder die attach.
“IMS is the preeminent gathering of stakeholders in the field of RF, microwave, and millimeter-wave technologies,” said Tim Going, president of StratEdge. “5G and its high-power infrastructure, the Internet of Things, and advanced cellular technologies requiring RF and microwave frequencies will make package selection critical. IMS is a great opportunity for those involved to visit our booth and discuss their packaging requirements.”
StratEdge will be exhibiting in booth 1649, at IMS2018, on June 12-14 2018 at the Pennsylvania Convention Center, Philadelphia, Pennsylvania.
For more information, contact StratEdge at firstname.lastname@example.org, shop at the StratEdge store on Amazon.com, sign up for the StratEdge newsletter, and/or visit our new website at www.stratedge.com